Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET

نویسندگان

  • G P. Lansbergen
  • R Rahman
  • C J. Wellard
  • J Caro
  • Gerhard Klimeck
  • G. P. LANSBERGEN
  • R. RAHMAN
  • C. J. WELLARD
چکیده

Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET" (2008). Birck and NCN Publications. Paper 129.

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تاریخ انتشار 2014